Capacitance of a Double-Heterojunction GaAs/AlGaAs Structure Subjected to In-Plane Magnetic Fields: Results of Self-Consistent Calculations

摘要

The capacitance of a double-heterojunction structure with a wide GaAs undopedlayer embedded between two selectively doped AlGaAs barriers is calculatedself-consistently as a function of intensity of the in-plane magnetic field.With increasing field intensity the capacitance initially increases and afterreaching a maximum decreases toward a high field limit which is less than itszero field value. This behaviour is attributed to 'breathing', or chargeredistribution, of the 2D electron gas at individual heterojunctions due to acombination of the confining potential and the magnetic field.